Therefore, hard-switching topologies such as totem-pole PFC can be employed to achieve higher efficiency, for example in datacenter and server power supplies, in order to save energy and reduce OPEX. As Infineon’s CoolGaN™ transistors have no minority carriers and no body diode they do not exhibit a reverse recovery. The most important feature of a GaN power transistor is its reverse recovery performance. Operation at high switching frequencies allows the volume of passive components to shrink which improves GaN HEMTs reliability and overall power density. Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride (GaN) transistors offer fundamental advantages over silicon.
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